2kbpxxm-e4, 3n25x-e4 www.vishay.com vishay general semiconductor revision: 05-aug-15 1 document number: 88532 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 glass passivated single-p hase bridge rectifier features ? ul recognition file number e54214 ? ideal for printed circuit board ? high surge current capability ? high case dielectric strength ? solder dip 275 c max. 10 s, per jesd 22-b106 ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications general purpose use in ac/dc bridge full wave rectification for switching power supply, home appliances, office equipment, and telecommunication applications. mechanical data case: kbpm molding compound meets ul 94 v-0 flammability rating base p/n-e4 - rohs-co mpliant, commercial grade terminals: silver plated leads, solderable per j-std-002 and jesd22-b102 polarity: as marked on body ? primary characteristics package kbpm i f(av) 2.0 a v rrm 50 v to 1000 v i fsm 60 a i r 5 a v f at i f = 3.14 a 1.1 v t j max. 165 c diode variations in-line +~ ~? case style kbpm + ~ ~ ? maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 2kbp005m 2kbp01m 2kbp02m 2kbp 04m 2kbp06m 2kbp08m 2kbp10m unit 3n253 3n254 3n255 3n256 3n257 3n258 3n259 maximum repetitive peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward output rectified current at t a = 55 c i f(av) 2.0 a peak forward surge current single half sine-wave superimposed on rated load i fsm 60 a rating for fusing (t < 8.3 ms) i 2 t15a 2 s operating junction and storage temperature range t j , t stg -55 to +165 c electrical characteristics (t a = 25 c unless otherwise noted) parameter symbol test conditions 2kbp005m 2kbp01m 2kbp02m 2kbp04m 2kbp06m 2kbp08m 2kbp10m unit 3n253 3n254 3n255 3n256 3n257 3n258 3n259 maximum instantaneous forward voltage drop per diode v f 3.14 a 1.1 v maximum dc reverse current at rated dc blocking volt age per diode i r t a = 25 c 5.0 a t a = 125 c 500 typical junction capacitance per diode t j 4.0 v, ? 1 mhz 25 pf
2kbpxxm-e4, 3n25x-e4 www.vishay.com vishay general semiconductor revision: 05-aug-15 2 document number: 88532 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) thermal resistance from junction to ambien t and from junction to lead mounted on pcb with, 0.47" x 0.47" (12 mm x 12 mm) copper pads ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - derating curve output rectified current fig. 2 - maximum non-repetitive peak forward surgecurrent per diode fig. 3 - typical forward characteristics per diode fig. 4 - typical reverse leakage characteristics per diode thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol 2kbp005m 2kbp01m 2kbp02m 2kbp 04m 2kbp06m 2kbp08m 2kbp10m unit 3n253 3n254 3n255 3n256 3n257 3n258 3n259 typical thermal resistance r ? ja (1) 30 c/w r ? jl (1) 11 ordering information (example) preferred p/n unit weight (g) package code base quantity delivery mode 2kbp06m-e4/51 1.895 51 600 anti-static pvc tray 3n257-e4/51 1.895 51 600 anti-static pvc tray 20 40 60 80 100 120 140 160 170 0 0.5 1.0 1.5 2.0 capacitive load 5.0 10 20 = i (pk) i (av) (per leg) pcb mounted with 0.47 x 0.47" (12 x 12 mm) copper pads 60 hz resistive or inductive load ambient temperature (?) average forward output current (a) 1 10 100 0 10 20 30 40 50 60 t j = 150 ? single sine-wave number of cycles at 60 hz peak forward surge current (a) 1.0 cycle 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0.1 1 10 100 t j = 25 ? pulse width = 300 ? 1 % duty cycle instantaneous forward voltage (v) instantaneous forward current (a) 0 20 40 60 80 100 0.01 0.1 1 10 100 percent of rated peak reverse voltage (%) instantaneous reverse current (?) t j = 100 ? t j = 125 ? t j = 25 ?
2kbpxxm-e4, 3n25x-e4 www.vishay.com vishay general semiconductor revision: 05-aug-15 3 document number: 88532 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical j u nction capacitance per diode package outline dimensions in inches (millimeters) 0.1 1 10 100 1 10 100 reverse voltage (v) junction capaci tance (pf) t j = 25 ? f = 1.0 mhz v sig = 50 mvp-p polarity shown on front side of case: positive lead by beveled corner 0.125 x 45 (3.2) 0.600 (15.24) 0.560 (14.22) 0.034 (0.86) 0.028 (0.76) 0.105 (2.67) 0.085 (2.16) 0.160 (4.1) 0.140 (3.6) 0.060 (1.52) 0.460 (11.68) 0.50 (12.7) min. 0.420 (10.67) 0.500 (12.70) 0.460 (11.68) 0.60 (15.2) min. dia. 0.200 (5.08) 0.180 (4.57) case style kbpm
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